Power MOSFETS | Status : Preferred

MCGD115NP10L

Part Number	Number of Functions	Channel	Drain-Source Voltage V_DS (V)	Gate-Source Voltage V_GS (V)	Drain Current I_D (A)	Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω)	Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω)	Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω)	Gate Threshold Voltage VGS(th) Min (V)	Gate Threshold Voltage VGS(th) Max (V)	ESD Diodes	Junction Temperature Tj [max] (°C)	Single Pulsed Avalanche Energy E_AS(mJ)	Pulsed Drain Current I_DM(A)	Input Capacitance Ciss(pF)	Output Capacitance Coss(pF)	Power Rating P_D(W)	Total Gate Charge Qg(nC)	Gate-Drain Charge Qgd(nC)
MCGD115NP10L	Dual	N+P	100/-100	±20	10/-5.5	0.115/0.325	0.125/0.350		1.3/-1.0	2.3/-2.0	No	150	8/6.1	40/-22	851/949	30/24	31/24	23/18.4	6.7/2.2

Part Number MCGD115NP10L

Number of Functions Dual

Channel N+P

Drain-Source
Voltage
V_DS (V) 100/-100

Gate-Source
Voltage
V_GS (V) ±20

Drain
Current
I_D (A) 10/-5.5

Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω) 0.115/0.325

Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω) 0.125/0.350

Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)

Gate
Threshold
Voltage
VGS(th)
Min
(V) 1.3/-1.0

Gate
Threshold
Voltage
VGS(th) Max
(V) 2.3/-2.0

ESD
Diodes No

Junction
Temperature
Tj [max]
(°C) 150

Single Pulsed
Avalanche
Energy
E_AS(mJ) 8/6.1

Pulsed Drain
Current
I_DM(A) 40/-22

Part Number	Package Type	Packing Specification	Component Weight (g)	Marking Code	Packing Info
MCGD115NP10L	DFN3333-D	DFN3333-D	0.0272	115NP10L	Tape&Reel:5Kpcs/Reel;

Reliability Report	Soldering Profile	Environmental Compliance
Download	Download	Download

MSL	Halogen Free	MTBF	FIT
3		0.00	0.0

Part Number	Category	Package Type	Status	Datasheet
MCAC130N04Y	Power MOSFETS	PDFN5060	Preferred	Datasheet
MCAC150N03A	Power MOSFETS	DFN5060	Active	Datasheet
MCAC50N03	Power MOSFETS	DFN5060	Active	Datasheet
MCAC50N10Y	Power MOSFETS	DFN5060	Active	Datasheet

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