Power MOSFETS | Status : Preferred

MCGD115NP10L

  • Package Type:DFN3333-D
  • Packing Info:Tape&Reel:5Kpcs/Reel
  • Category:Power MOSFETS
  • MPN:MCGD115NP10L-TP
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Datasheet ECAD Model Reliability Data

Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)		 Gate-Source
Voltage
VGS (V)		 Drain
Current
ID (A)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)		 Gate
Threshold
Voltage
VGS(th)
Min
(V)		 Gate
Threshold
Voltage
VGS(th) Max
(V)		 ESD
Diodes		 Junction
Temperature
Tj [max]
(°C)		 Single Pulsed
Avalanche
Energy
EAS(mJ)		 Pulsed Drain
Current
IDM(A)		 Input
Capacitance
Ciss(pF)		 Output
Capacitance
Coss(pF)		 Power
Rating
PD(W)		 Total Gate
Charge
Qg(nC)		 Gate-Drain
Charge
Qgd(nC)
MCGD115NP10L Dual N+P 100/-100 ±20 10/-5.5 0.115/0.325 0.125/0.350 1.3/-1.0 2.3/-2.0 No 150 8/6.1 40/-22 851/949 30/24 31/24 23/18.4 6.7/2.2
Part Number MCGD115NP10L Number of Functions Dual Channel N+P Drain-Source
Voltage
VDS (V)  100/-100 		Gate-Source
Voltage
VGS (V)  ±20 		Drain
Current
ID (A)  10/-5.5 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)  0.115/0.325 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)  0.125/0.350 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)   		Gate
Threshold
Voltage
VGS(th)
Min
(V)  1.3/-1.0 		Gate
Threshold
Voltage
VGS(th) Max
(V)  2.3/-2.0 		ESD
Diodes  No 		Junction
Temperature
Tj [max]
(°C)  150 		Single Pulsed
Avalanche
Energy
EAS(mJ)  8/6.1 		Pulsed Drain
Current
IDM(A)  40/-22

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code Packing Info
MCGD115NP10L DFN3333-D DFN3333-D 0.0272 115NP10L Tape&Reel:5Kpcs/Reel;

Environmental Information link icon

Reliability Report Soldering Profile Environmental Compliance
Configuration image Download Configuration image Download Environmental Compliance Download
MSL Halogen Free MTBF FIT
3 Halogen Free 0.00 0.0

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