Power MOSFETS | Status : Active

MCGD10NP03

  • Package Type:DFN3333-D
  • Packing Info:Tape&Reel:5Kpcs/Reel;
  • Category:Power MOSFETS
  • MPN:MCGD10NP03-TP
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Datasheet ECAD Model Reliability Data

Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)		 Gate-Source
Voltage
VGS (V)		 Drain
Current
ID (A)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)		 Gate
Threshold
Voltage
VGS(th)
Min
(V)		 Gate
Threshold
Voltage
VGS(th) Max
(V)		 ESD
Diodes		 Junction
Temperature
Tj [max]
(°C)		 Single Pulsed
Avalanche
Energy
EAS(mJ)		 Pulsed Drain
Current
IDM(A)		 Input
Capacitance
Ciss(pF)		 Output
Capacitance
Coss(pF)		 Power
Rating
PD(W)		 Total Gate
Charge
Qg(nC)		 Gate-Drain
Charge
Qgd(nC)
MCGD10NP03 Dual N+P 30/-30 ±20 10/-10 0.017/0.040 0.029/0.073 1.5/-1.5 2.5/-2.5 Yes 150 20/24 40/-40 873/888 77/92 21 15/16 2.0/3.0
Part Number MCGD10NP03 Number of Functions Dual Channel N+P Drain-Source
Voltage
VDS (V)  30/-30 		Gate-Source
Voltage
VGS (V)  ±20 		Drain
Current
ID (A)  10/-10 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)  0.017/0.040 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)  0.029/0.073 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)   		Gate
Threshold
Voltage
VGS(th)
Min
(V)  1.5/-1.5 		Gate
Threshold
Voltage
VGS(th) Max
(V)  2.5/-2.5 		ESD
Diodes  Yes 		Junction
Temperature
Tj [max]
(°C)  150 		Single Pulsed
Avalanche
Energy
EAS(mJ)  20/24 		Pulsed Drain
Current
IDM(A)  40/-40

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code Packing Info
MCGD10NP03 DFN3333-D DFN3333-D 0.0272 D10NP03 Tape&Reel:5Kpcs/Reel;

Environmental Information link icon

Reliability Report Soldering Profile Environmental Compliance
Configuration image Download Configuration image Download Environmental Compliance Download
MSL Halogen Free MTBF FIT
3 Halogen Free 0.00 0.0

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