Power MOSFETS | Status :
Preferred
Automotive
MCU031N06Q
- Package Type:DPAK
- Packing Info:Tape:2.5K/Reel,25K/Ctn;
- Category:Power MOSFETS
- MPN:MCU031N06Q-TP
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCU031N06Q | Single | N | 60 | ±20 | 23 | 0.031 | 0.05 | 1.5 | 2.5 | No | 175 | 56 | 92 | 920 | 65 | 41.6 | 18 | 2.4 |
| Part Number MCU031N06Q | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 60 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 23 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.031 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.05 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1.5 |
Gate Threshold Voltage VGS(th) Max (V) 2.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 56 |
Pulsed Drain Current IDM(A) 92 |
Packing Information
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