Power MOSFETS | Status :
NRND
Automotive
MCT06P10HE3
- Package Type:SOT-223
- Packing Info:Tape&Reel:2.5Kpcs/Reel
- Category:Power MOSFETS
- MPN:MCT06P10HE3-TP
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCT06P10HE3 | Single | P | -100 | ±20 | -6 | 0.21 | 0.24 | -1 | -2.5 | No | 150 | 23 | -24 | 1369 | 34 | 1.9 | 24.6 | 3 |
| Part Number MCT06P10HE3 | Number of Functions Single | Channel P |
Drain-Source Voltage VDS (V) -100 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) -6 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.21 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.24 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) -1 |
Gate Threshold Voltage VGS(th) Max (V) -2.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 23 |
Pulsed Drain Current IDM(A) -24 |
Packing Information
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