Power MOSFETS | Status :
Preferred
MCTT1D7N10Y
- Package Type:TOLT
- Packing Info:Tape&Reel:1.2Kpcs/Reel;
- Category:Power MOSFETS
- MPN:MCTT1D7N10Y-TP
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCTT1D7N10Y | Single | N | 100 | ±20 | 333 | 0.0017 | 2 | 4 | No | 175 | 2722 | 1320 | 10692 | 2011 | 416 | 166 | 49 |
| Part Number MCTT1D7N10Y | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 100 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 333 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.0017 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2 |
Gate Threshold Voltage VGS(th) Max (V) 4 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 2722 |
Pulsed Drain Current IDM(A) 1320 |
Packing Information
Environmental Information 
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| MSL | MTBF | FIT |
|---|---|---|
| 1 | 0.00 | 0.0 |
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