Power MOSFETS | Status : Preferred
Automotive

MCU2D5N04YHQ

  • Package Type:DPAK
  • Packing Info:Tape&Reel:2.5Kpcs/Reel;
  • Category:Power MOSFETS
  • MPN:MCU2D5N04YHQ-TP
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Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)
Gate-Source
Voltage
VGS (V)
Drain
Current
ID (A)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)
Gate
Threshold
Voltage
VGS(th)
Min
(V)
Gate
Threshold
Voltage
VGS(th) Max
(V)
ESD
Diodes
Junction
Temperature
Tj [max]
(°C)
Single Pulsed
Avalanche
Energy
EAS(mJ)
Pulsed Drain
Current
IDM(A)
Input
Capacitance
Ciss(pF)
Output
Capacitance
Coss(pF)
Power
Rating
PD(W)
Total Gate
Charge
Qg(nC)
Gate-Drain
Charge
Qgd(nC)
MCU2D5N04YHQ Single N 40 ±20 130 0.0025 2 4 No 175 790 520 4300 1200 125 57 5.7
Part Number MCU2D5N04YHQ Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)
 40
Gate-Source
Voltage
VGS (V)
 ±20
Drain
Current
ID (A)
 130
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)
 0.0025
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)
 
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)
 
Gate
Threshold
Voltage
VGS(th)
Min
(V)
 2
Gate
Threshold
Voltage
VGS(th) Max
(V)
 4
ESD
Diodes
 No
Junction
Temperature
Tj [max]
(°C)
 175
Single Pulsed
Avalanche
Energy
EAS(mJ)
 790
Pulsed Drain
Current
IDM(A)
 520

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code Packing Info
MCU2D5N04YHQ DPAK DPAK 0.3252 2D5N04YHQ Tape&Reel:2.5Kpcs/Reel;

Environmental Information link icon

Reliability Report Material Composition Data Sheet Soldering Profile Environmental Compliance
Configuration image Download Configuration image Download Configuration image Download Environmental Compliance Download
MSL Halogen Free MTBF FIT
1 Halogen Free 0.00 0.0

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