Power MOSFETS | Status : Preferred

MCG5D9N03YL

  • Package Type:DFN3333
  • Packing Info:Tape&Reel:5Kpcs/Reel;
  • Category:Power MOSFETS
  • MPN:MCG5D9N03YL-TP
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Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)
Gate-Source
Voltage
VGS (V)
Drain
Current
ID (A)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)
Gate
Threshold
Voltage
VGS(th)
Min
(V)
Gate
Threshold
Voltage
VGS(th) Max
(V)
ESD
Diodes
Junction
Temperature
Tj [max]
(°C)
Single Pulsed
Avalanche
Energy
EAS(mJ)
Pulsed Drain
Current
IDM(A)
Input
Capacitance
Ciss(pF)
Output
Capacitance
Coss(pF)
Power
Rating
PD(W)
Total Gate
Charge
Qg(nC)
Gate-Drain
Charge
Qgd(nC)
MCG5D9N03YL Single N 30 ±20 45 0.0059 0.011 1.2 2.5 No 150 30 180 594 491 22 12.4 3.5
Part Number MCG5D9N03YL Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)
 30
Gate-Source
Voltage
VGS (V)
 ±20
Drain
Current
ID (A)
 45
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)
 0.0059
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)
 0.011
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)
 
Gate
Threshold
Voltage
VGS(th)
Min
(V)
 1.2
Gate
Threshold
Voltage
VGS(th) Max
(V)
 2.5
ESD
Diodes
 No
Junction
Temperature
Tj [max]
(°C)
 150
Single Pulsed
Avalanche
Energy
EAS(mJ)
 30
Pulsed Drain
Current
IDM(A)
 180

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code Packing Info
MCG5D9N03YL DFN3333 DFN3333 0.0280 MCG5D9N03YL Tape&Reel:5Kpcs/Reel;

Environmental Information link icon

Reliability Report Material Composition Data Sheet Soldering Profile Environmental Compliance
Configuration image Download Configuration image Download Configuration image Download Environmental Compliance Download
Tin Whisker Test Report MSL Halogen Free MTBF FIT
Tin Whisker Test Report 3 Halogen Free 0.00 0.0

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