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MCG08P06HE3

  • Package Type:DFN3333-8
  • Packing Info:Tape&Reel:5Kpcs/Reel;
  • Category:Power MOSFETS
  • MPN:MCG08P06HE3-TP
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Datasheet ECAD Model Spice Model Reliability Data

Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)		 Gate-Source
Voltage
VGS (V)		 Drain
Current
ID (A)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)		 Gate
Threshold
Voltage
VGS(th)
Min
(V)		 Gate
Threshold
Voltage
VGS(th) Max
(V)		 ESD
Diodes		 Junction
Temperature
Tj [max]
(°C)		 Single Pulsed
Avalanche
Energy
EAS(mJ)		 Pulsed Drain
Current
IDM(A)		 Input
Capacitance
Ciss(pF)		 Output
Capacitance
Coss(pF)		 Power
Rating
PD(W)		 Total Gate
Charge
Qg(nC)		 Gate-Drain
Charge
Qgd(nC)
MCG08P06HE3 Single P -60 ±20 -8 0.0284 0.0393 -1 -3 No 150 50 -32 4306 178 20.8 61 7.1
Part Number MCG08P06HE3 Number of Functions Single Channel P Drain-Source
Voltage
VDS (V)  -60 		Gate-Source
Voltage
VGS (V)  ±20 		Drain
Current
ID (A)  -8 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)  0.0284 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)  0.0393 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)   		Gate
Threshold
Voltage
VGS(th)
Min
(V)  -1 		Gate
Threshold
Voltage
VGS(th) Max
(V)  -3 		ESD
Diodes  No 		Junction
Temperature
Tj [max]
(°C)  150 		Single Pulsed
Avalanche
Energy
EAS(mJ)  50 		Pulsed Drain
Current
IDM(A)  -32

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code Packing Info
MCG08P06HE3 DFN3333-8 DFN3333-8 0.0290 08P06 Tape&Reel:5Kpcs/Reel;

Environmental Information link icon

Reliability Report Soldering Profile Environmental Compliance
Configuration image Download Configuration image Download Environmental Compliance Download
MSL Halogen Free MTBF FIT
3 Halogen Free 14988.69 7.6

ECN/PCN

ECN/PCN No# Title PDF Issued Date
081922-2 Additional a new wafer source for MCG08P06HE3-TP PDF 08/19/2022

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