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MCG40N10YHE3

  • Package Type:DFN3333
  • Packing Info:Tape&Reel:5Kpcs/Reel;
  • Category:Power MOSFETS
  • MPN:MCG40N10YHE3-TP
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Datasheet ECAD Model Reliability Data

Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)		 Gate-Source
Voltage
VGS (V)		 Drain
Current
ID (A)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)		 Gate
Threshold
Voltage
VGS(th)
Min
(V)		 Gate
Threshold
Voltage
VGS(th) Max
(V)		 ESD
Diodes		 Junction
Temperature
Tj [max]
(°C)		 Single Pulsed
Avalanche
Energy
EAS(mJ)		 Pulsed Drain
Current
IDM(A)		 Input
Capacitance
Ciss(pF)		 Output
Capacitance
Coss(pF)		 Power
Rating
PD(W)		 Total Gate
Charge
Qg(nC)		 Gate-Drain
Charge
Qgd(nC)
MCG40N10YHE3 Single N 100 ±20 40 0.0185 0.0225 1 2.5 No 150 81 110 1220 657 43 16 2.4
Part Number MCG40N10YHE3 Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)  100 		Gate-Source
Voltage
VGS (V)  ±20 		Drain
Current
ID (A)  40 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)  0.0185 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)  0.0225 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)   		Gate
Threshold
Voltage
VGS(th)
Min
(V)  1 		Gate
Threshold
Voltage
VGS(th) Max
(V)  2.5 		ESD
Diodes  No 		Junction
Temperature
Tj [max]
(°C)  150 		Single Pulsed
Avalanche
Energy
EAS(mJ)  81 		Pulsed Drain
Current
IDM(A)  110

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code Packing Info
MCG40N10YHE3 DFN3333 DFN3333 0.0280 MCG40N10Y Tape&Reel:5Kpcs/Reel;

Environmental Information link icon

Reliability Report Material Composition Data Sheet Soldering Profile Environmental Compliance
Configuration image Download Configuration image Download Configuration image Download Environmental Compliance Download
Tin Whisker Test Report MSL Halogen Free MTBF FIT
Tin Whisker Test Report 3 Halogen Free 9992.46 11.4

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