Power MOSFETS | Status : Preferred

MCG052P10Y

  • Package Type:DFN3333
  • Packing Info:Tape&Reel:5Kpcs/Reel;
  • Category:Power MOSFETS
  • MPN:MCG052P10Y-TP
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Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)
Gate-Source
Voltage
VGS (V)
Drain
Current
ID (A)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)
Gate
Threshold
Voltage
VGS(th)
Min
(V)
Gate
Threshold
Voltage
VGS(th) Max
(V)
ESD
Diodes
Junction
Temperature
Tj [max]
(°C)
Single Pulsed
Avalanche
Energy
EAS(mJ)
Pulsed Drain
Current
IDM(A)
Input
Capacitance
Ciss(pF)
Output
Capacitance
Coss(pF)
Power
Rating
PD(W)
Total Gate
Charge
Qg(nC)
Gate-Drain
Charge
Qgd(nC)
MCG052P10Y Single P -100 ±25 -16 0.052 -1.9 -3.5 No 150 72 -64 860 217 25 14.2 3.7
Part Number MCG052P10Y Number of Functions Single Channel P Drain-Source
Voltage
VDS (V)
 -100
Gate-Source
Voltage
VGS (V)
 ±25
Drain
Current
ID (A)
 -16
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)
 0.052
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)
 
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)
 
Gate
Threshold
Voltage
VGS(th)
Min
(V)
 -1.9
Gate
Threshold
Voltage
VGS(th) Max
(V)
 -3.5
ESD
Diodes
 No
Junction
Temperature
Tj [max]
(°C)
 150
Single Pulsed
Avalanche
Energy
EAS(mJ)
 72
Pulsed Drain
Current
IDM(A)
 -64

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code Packing Info
MCG052P10Y DFN3333 DFN3333 0.0280 MCG052P10Y Tape&Reel:5Kpcs/Reel;

Environmental Information link icon

Reliability Report Material Composition Data Sheet Soldering Profile Environmental Compliance
Configuration image Download Configuration image Download Configuration image Download Environmental Compliance Download
Tin Whisker Test Report MSL Halogen Free MTBF FIT
Tin Whisker Test Report 3 Halogen Free 0.00 0.0

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