Power MOSFETS | Status :
Active
MCU09N20
- Package Type:DPAK
- Packing Info: Tape:2.5K/Reel,25K/Ctn;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCU09N20 | Single | N | 200 | ±30 | 9 | 0.25 | 1 | 3 | No | 150 | 72 | 36 | 541 | 89 | 83 | 16 | 6.1 |
| Part Number MCU09N20 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 200 |
Gate-Source Voltage VGS (V) ±30 |
Drain Current ID (A) 9 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.25 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1 |
Gate Threshold Voltage VGS(th) Max (V) 3 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 72 |
Pulsed Drain Current IDM(A) 36 |
Packing Information
Environmental Information 
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