Power MOSFETS | Status :
Preferred
MCTT1D9N10YH
- Package Type:TOLT
- Packing Info:Tape&Reel:1.2Kpcs/Reel
- Category:Power MOSFETS
- MPN:MCTT1D9N10YH-TP
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCTT1D9N10YH | Single | N | 100 | ±20 | 272 | 0.0019 | 2.2 | 3.8 | No | 175 | 1225 | 1088 | 9600 | 3245 | 312 | 132.5 | 17 |
| Part Number MCTT1D9N10YH | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 100 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 272 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.0019 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2.2 |
Gate Threshold Voltage VGS(th) Max (V) 3.8 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 1225 |
Pulsed Drain Current IDM(A) 1088 |
Packing Information
| MSL | MTBF | FIT |
|---|---|---|
| 1 | 0.00 | 0.0 |
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