Power MOSFETS | Status : Preferred

MCP2D5N10Y

  • Package Type:TO-220AB(B)
  • Packing Info:Bulk:50pcs/Tube,1Kpcs/Box; Bulk:50pcs/Tube,1Kpcs/Box;
  • Category:Power MOSFETS
  • MPN:MCP2D5N10Y-BP
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Datasheet ECAD Model Reliability Data

Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)		 Gate-Source
Voltage
VGS (V)		 Drain
Current
ID (A)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)		 Gate
Threshold
Voltage
VGS(th)
Min
(V)		 Gate
Threshold
Voltage
VGS(th) Max
(V)		 ESD
Diodes		 Junction
Temperature
Tj [max]
(°C)		 Single Pulsed
Avalanche
Energy
EAS(mJ)		 Pulsed Drain
Current
IDM(A)		 Input
Capacitance
Ciss(pF)		 Output
Capacitance
Coss(pF)		 Power
Rating
PD(W)		 Total Gate
Charge
Qg(nC)		 Gate-Drain
Charge
Qgd(nC)
MCP2D5N10Y Single N 100 ±20 252 0.0025 2 4 No 175 1440 1008 10700 2125 300 166 49
Part Number MCP2D5N10Y Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)  100 		Gate-Source
Voltage
VGS (V)  ±20 		Drain
Current
ID (A)  252 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)  0.0025 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)   		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)   		Gate
Threshold
Voltage
VGS(th)
Min
(V)  2 		Gate
Threshold
Voltage
VGS(th) Max
(V)  4 		ESD
Diodes  No 		Junction
Temperature
Tj [max]
(°C)  175 		Single Pulsed
Avalanche
Energy
EAS(mJ)  1440 		Pulsed Drain
Current
IDM(A)  1008

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code
MCP2D5N10Y TO-220AB(B) TO-220AB(B) 2.0700 MCP2D5N10Y

Environmental Information link icon

Reliability Report Soldering Profile Environmental Compliance
Configuration image Download Configuration image Download Environmental Compliance Download
MSL MTBF FIT
N/A 0.00 0.0

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