_Power_MOSFETS_MOSFETs_MCC.png)
Power MOSFETS | Status :
Preferred
Automotive
MCGWF011N10YLHE3
- Package Type:DFN3333-8(SWF)
- Packing Info:Tape&Reel:5Kpcs/Reel;
- Category:Power MOSFETS
- MPN:MCGWF011N10YLHE3-TP
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCGWF011N10YLHE3 | Single | N | 100 | ±20 | 65 | 0.011 | 0.016 | 1 | 2.5 | No | 175 | 81 | 260 | 1386 | 576 | 100 | 28 | 7.8 |
| Part Number MCGWF011N10YLHE3 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 100 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 65 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.011 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.016 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1 |
Gate Threshold Voltage VGS(th) Max (V) 2.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 81 |
Pulsed Drain Current IDM(A) 260 |
Packing Information
| Part Number | Package Type | Packing Specification | Component Weight (g) | Marking Code | Packing Info |
|---|---|---|---|---|---|
| MCGWF011N10YLHE3 | DFN3333-8(SWF) | DFN3333-8(SWF) | 0.0000 | 011N10 | Tape&Reel:5Kpcs/Reel; |
Environmental Information 
Download
| MSL | MTBF | FIT |
|---|---|---|
| 1 | 0.00 | 0.0 |
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