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MSJP11N65A

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Datasheet ECAD Model

Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)		 Gate-Source
Voltage
VGS (V)		 Drain
Current
ID (A)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)		 Gate
Threshold
Voltage
VGS(th)
Min
(V)		 Gate
Threshold
Voltage
VGS(th) Max
(V)		 ESD
Diodes		 Junction
Temperature
Tj [max]
(°C)		 Single Pulsed
Avalanche
Energy
EAS(mJ)		 Pulsed Drain
Current
IDM(A)		 Input
Capacitance
Ciss(pF)		 Output
Capacitance
Coss(pF)		 Power
Rating
PD(W)		 Total Gate
Charge
Qg(nC)		 Gate-Drain
Charge
Qgd(nC)
MSJP11N65A Single N 650 ±30 11 0.38 2 4 No 774 890 83 20 10
Part Number MSJP11N65A Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)  650 		Gate-Source
Voltage
VGS (V)  ±30 		Drain
Current
ID (A)  11 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)  0.38 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)   		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)   		Gate
Threshold
Voltage
VGS(th)
Min
(V)  2 		Gate
Threshold
Voltage
VGS(th) Max
(V)  4 		ESD
Diodes  No 		Junction
Temperature
Tj [max]
(°C)   		Single Pulsed
Avalanche
Energy
EAS(mJ)   		Pulsed Drain
Current
IDM(A)  

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code
MSJP11N65A TO-220 TO-220 2.2400 MSJP11N65A

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Reliability Report Material Composition Data Sheet Soldering Profile Environmental Compliance
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Tin Whisker Test Report
Tin Whisker Test Report

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