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SIC MOSFETS | Status :
Active
SICW080N120Y4
- Package Type:TO-247-4
- Packing Info:Tube:30pcs/Tube, 1.8K/Ctn;
- Category:SIC MOSFETS
- MPN:SICW080N120Y4-BP
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=15V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SICW080N120Y4 | Single | N | 1200 | -8/+22 | 39 | 0.085 | 2.3 | 3.6 | No | 175 | 80 | 890 | 223 | 41 |
| Part Number SICW080N120Y4 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 1200 |
Gate-Source Voltage VGS (V) -8/+22 |
Drain Current ID (A) 39 |
Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω) 0.085 |
Drain-Source On-Resistance RDS(ON) Max @VGS=15V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2.3 |
Gate Threshold Voltage VGS(th) Max (V) 3.6 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) 80 |
Packing Information
| Part Number | Package Type | Packing Specification | Component Weight (g) | Marking Code |
|---|---|---|---|---|
| SICW080N120Y4 | TO-247-4 |
TO-247-4
|
6.1165 | SICW080N120Y4 |
Environmental Information 
Download
| MSL | MTBF | FIT |
|---|---|---|
| N/A | 21885.51 | 5.2 |
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