IGBT Discrete

When the application demands rugged performance, MCC’s discrete insulated gate bipolar transistors (IGBTs) use advanced field-stop trench technology to deliver various solutions in voltage classes to satisfy diverse application requirements. Our discrete IGBTs are available with or without fast and soft recovery anti-parallel FWD and include AEC-Q101 qualified options.

物料品号   状态   Compliance Number of
Functions  
封装   Collector‐Emitter
Voltage
VCE (V)  
DC Collector Currentt
@ Tc=100°C
IC (A)  
Collector‐Emitter
Saturation Voltage
VCE(sat) (V)  
Turn-On
Energy@TJ=25°C
Eon (mJ)  
Turn‐Off
Energyy@TJ=25°C
Eoff (mJ)  
Junction
Temperature
Tj [max] (°C)  
Power
Rating
PD(W)