MCC's current definition of lead free products is products that have no external lead (standard use in plating material).
NOTE: RoHS revision 2011/65/EU. Glass and High Temperature Solder Exemptions Applied, see EU directive Annex Notes 7(c)I and 7(a)
MCC Glass Passivation Process (GPP) for rectifier silicon occurs in the wafer form after the Wafer Diffusion Process. After the Diffusion Process, the wafer is masked with a photo resist film and the dice are pattern etched through the junction plane. This process is called mesa etching. The exposed p-n junction surface is then passivated in a two-layer process. First, an oxygen doped, Semi-Insulating Poly Crystalline Silicon (SIPOS) layer is deposited onto the silicon junction surface by Low Pressure Chemical Vapor Deposition (LPCVD) to stabilize the region. Then high temperature glass is deposited over the SIPOS layer and protects the junction from ambient contamination and mechanical damage.
Below is typical cross section of our GPP Die:
Note: This is a typical GPP rectifier die; however, particular processes and materials used may vary depending on the specific device. Please contact a MCC application engineer for more detailed information regarding a specific device: